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CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 1/4
BTP6520A3
Features
* High Breakdown Voltage:BVCEO-350V * Complementary to BTN6517A3
Symbol
BTP6520A3 TO-92
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 625 150 -55~+150 Unit V V V mA mW C C
BTP6520A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. -350 -350 -5 20 30 30 20 15 40 Typ. Max. -50 -50 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.9 -2 200 200 200 6 Unit V V V nA nA V V V V V V V V MHz pF
Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 2/4
Test Conditions IC=-100A IC=-1mA IE=-10A VCB=-250V VEB=-4V IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA VCE=-10V, IC=-100mA VCE=-10V, IC=-1mA VCE=-10V,IC=-10mA VCE=-10V,IC=-30mA VCE=-10V,IC=-50mA VCE=-10V,IC=-100mA VCE=-20V, IC=-10mA, f=20MHz VCB=-20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
BTP6520A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000
VCE=10V
Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current 100000 Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Current Gain---HFE
100
10000
1000
10
100
1 0.1 1 10 100 1000 Collector Current---IC(mA)
10 1 10 100 1000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) 1000
On voltage vs Collector Current
VBE(SAT)@IC=10IB
ON Voltage---(mV)
VBE(on)@VCE=10V
100 1 10 100 1000 Collector Current---IC(mA)
100 0.1 1 10 100 1000 Collector Collector---IC(mA)
Power Derating Curve
700
Power Dissipation---PD(mW)
600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature---TA()
BTP6520A3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
2
Spec. No. : C321A3 Issued Date : 2003.04.12 Revised Date : Page No. : 4/4
A B
1 2 3
Marking:
3
6520
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTP6520A3
CYStek Product Specification

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